Atomic Scale Simulation of Thin Film Growth by Kinetic Monte Carlo Method
نویسندگان
چکیده
We have developed atomic scale simulations of thin film growth using Kinetic Monte Carlo (KMC) method. We have applied the method to the two extreme cases of GaAs(100) growth and to the dry oxidation of Si(100), observing similar features. We show that these features are characteristics of molecule-surface interactions We consider that the molecules As2 and O2 are first adsorbed in the physisorbed state before dissociation in a chemisorbed state. to exceed to the chemisorbed state. Up-to-date, no model of simulation has taken the energetic model for the physisorbed state of the arsenic or the oxygen into account. The existence of the physisorbed state and its further diffusion along the surface are certainly at the origin of the reported features.
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